2007 2nd International Workshop on Advances in Sensors and by Institute of Electrical and Electronics Engineers

By Institute of Electrical and Electronics Engineers

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A pattern of a 5 nm channel with side guards as close as 20 nm away is shown in Fig. 13a. Bottomcontact devices were completed by subliming pentacene molecules, resulting in pentacene layer with an average grain size of about 100 nm. The dc electrical characteristics of the transistors were measured in air at room temperature. After the measurements, all the devices were examined by SEM. 13b shows the post-measurement SEM image of a bottom-contact pentacene transistor of 9 nm channel length. By applying the same potential as the drain on the two side guards, the true source-to-drain current (−Ids) was observed as shown in Fig.

2, we can investigate the transport behavior of OTFTs in truly nanoscale dimensions excluding the spreading currents in large area, without the difficulty to pattern the semiconductor layer into such a small size as the channel length. More importantly, with these devices as chemical sensors, the side-guarding function ensures that the active sensing area is truly nansocale. This novel four-terminal geometric design provides a powerful capability to investigate the sensing behavior within the nanoscale active area through the defined channel without any undesirable background from large-scale parasitic conduction pathways around the channel.

40. ) Scaling Effects in Organic Transistors and Transistor-Based Chemical Sensors higher than the operating drain voltage (Vds, up to −5 V), which causes the FET to operate in the linear region. 046 cm2/(V ⋅ s), and the on/off ratio (at Vds = −5 V) is 97 for this device. The superlinear characteristics at the high Vg end are probably due to the possibility that channel resistance becomes small enough at high gate biases that contact resistance plays a role. The measured devices can be broadly classified into two groups.

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